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4N32/ 4N33
Vishay Telefunken
Optocoupler with Photodarlington Output
Description
The 4N32 and 4N33 consist of a photodarlington optically coupled to a gallium arsenide infrared-emitting diode in a 6-lead plastic dual inline package. The elements are mounted on one leadframe using a coplanar technique, providing a fixed distance between input and output for highest safety requirements.
Applications
95 10532
Galvanically separated switches
circuits,
non-interacting
Features
D High isolation resistance D Underwriters Laboratory (UL) 1577 recognized,
file number E-76222
B 6
C 5
E 4
D Low coupling capacity typical 0.3 pF D High Current Transfer Ratio (CTR) D Low temperature coefficient of CTR D Coupling System A
1 2 3 A (+) C (-) nc
Order Instruction
Ordering Code 4N32 4N33 CTR Ranking > 500% > 500% Remarks
Rev. A4, 11-Jan-99
95 10806
95
4N32/ 4N33
Vishay Telefunken Absolute Maximum Ratings
Input (Emitter)
Parameter Reverse voltage Forward current Forward surge current Power dissipation Junction temperature Test Conditions Symbol VR IF IFSM PV Tj Value 6 60 3 100 125 Unit V mA A mW C
tp 10 ms Tamb 25C
Output (Detector)
Parameter Collector base voltage Collector emitter voltage Emitter collector voltage Collector current Peak collector current Power dissipation Junction temperature Test Conditions Symbol VCBO VCEO VECO IC ICM PV Tj Value 50 30 5 150 200 150 125 Unit V V V mA mA mW C
tp/T = 0.5, tp 10 ms Tamb 25C
Coupler
Parameter Isolation test voltage (RMS) Total power dissipation Ambient temperature range Storage temperature range Soldering temperature Test Conditions t = 1 min Tamb 25C Symbol VIO Ptot Tamb Tstg Tsd Value 3.75 250 -55 to +100 -55 to +125 260 Unit kV mW C C C
2 mm from case, t 10 s
96
Rev. A4, 11-Jan-99
4N32/ 4N33
Vishay Telefunken Electrical Characteristics (Tamb = 25C)
Input (Emitter)
Parameter Forward voltage Junction capacitance Test Conditions IF = 50 mA VR = 0, f = 1 MHz Symbol VF Cj Min. Typ. 1.25 50 Max. 1.5 Unit V pF
Output (Detector)
Parameter Collector base voltage Collector emitter voltage Emitter collector voltage Collector dark current Test Conditions IC = 100 mA IC = 1mA IC = 100 mA VCE = 10 V, IF = 0, E = 0 Symbol VCBO VCEO VECO ICEO Min. 50 30 5 Typ. Max. Unit V V V nA
100
Coupler
Parameter Isolation test voltage (RMS) Isolation resistance Collector emitter saturation voltage Cut-off frequency Test Conditions f = 50 Hz, t = 2 s VIO = 1000 V, 40% relative humidity IF = 8 mA, IC = 2 mA Symbol VIO1) RIO1) VCEsat fc Ck 30 0.3 Min. 3.75 Typ. Max. Unit kV
1012 1
W
V kHz pF
IF = 2 mA, VCE = 10 V, RL = 100 W Coupling capacitance f = 1 MHz 1) Related to standard climate23/50 DIN 50014
Current Transfer Ratio (CTR)
Parameter IC/IF Test Conditions Type VCE = 10 V, IF = 10 mA, 4N32, 4N33 tp/T = 0.01, tp = 0.3 ms Symbol CTR Min. 5 Typ. Max. Unit
Rev. A4, 11-Jan-99
97
4N32/ 4N33
Vishay Telefunken Switching Characteristics
Parameter Turn-on time Turn-off time Test Conditions VS = 10 V, IC = 50 mA, RL = 100 W ( (see figure 1) g ) Symbol ton toff Typ. 50 40 Unit
ms ms
96 11698
IF 0 + 10 V IF IF 100 W IC = 50 mA ; Adjusted trough input amplitude Channel II IC 100% 90% tp
t
0
RG = 50 W tp T
+ 0.01
tp = 1 ms 50 W
14942
Channel I Oscilloscope RL 1 MW CL 20 pF
10% 0 tr td ton tp tion td tr ton (= td + tr) pulse duradelay time rise time turn-on time ts toff ts tf toff (= ts + tf) tf
t
Figure 1. Test circuit, non-saturated operation
storage time fall time turn-off time
Figure 2. Switching times
Typical Characteristics (Tamb = 25_C, unless otherwise specified)
400 P tot - Total Power Dissipation ( mW ) 1000.0
300 Coupled Device 200 Phototransistor 100 IR-Diode 0 0 30 60 90 120 150
I F - Forward Current ( mA )
100.0
10.0
1.0
0.1 0
96 11862
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 VF - Forward Voltage ( V )
95 10977
Tamb - Ambient Temperature ( C )
Figure 3. Total Power Dissipation vs. Ambient Temperature
Figure 4. Forward Current vs. Forward Voltage
98
Rev. A4, 11-Jan-99
4N32/ 4N33
Vishay Telefunken
1.5 1.4 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 0.5 -30 -20 -10 0 10 20 30 40 50 60 70 80 0.1 0.1
95 10981
CTR rel - Relative Current Transfer Ratio
1000 IC - Collector Current ( mA ) VCE=10V IF=1mA VCE=10V 100
10
1
1
10
100
96 11906
Figure 5. Relative Current Transfer Ratio vs. Ambient Temperature
10000 ICEO- Collector Dark Current, with open Base ( nA )
Tamb - Ambient Temperature ( C )
IF - Forward Current ( mA )
Figure 8. Collector Current vs. Forward Current
100 IC - Collector Current ( mA ) VCE=10V IF=0 IF=10mA 10 2mA 1mA 1 0.5mA 5mA
1000
100
10
1 0
95 10979
0.1 25 50 75 100
95 10982
0.1
1
10
100
Tamb - Ambient Temperature ( C )
VCE - Collector Emitter Voltage ( V )
Figure 6. Collector Dark Current vs. Ambient Temperature
1 I CB - Collector Base Current ( mA )
Figure 9. Collector Current vs. Collector Emitter Voltage
V CEsat - Collector Emitter Saturation Voltage ( V )
1.0
VCB=10V 0.1
0.9 200% 100 % CTR=50% 0.6 0.5 1 10 IC - Collector Current ( mA ) 100
0.8
0.01
0.7
0.001 1
95 10980
10 IF - Forward Current ( mA )
100
95 10983
Figure 7. Collector Base Current vs. Forward Current
Figure 10. Collector Emitter Saturation Voltage vs. Collector Current
Rev. A4, 11-Jan-99
99
4N32/ 4N33
Vishay Telefunken
Type
10000 CTR - Current Transfer Ratio ( % )
1000
Date Code (YM)
100
XXXXXX 918 A TK 63 0884 V DE
15090
Production Location Safety Logo
10 VCE=10V 1 0.1 1 10 100
Coupling System Indicator
Company Logo
95 10984
IF - Forward Current ( mA )
Figure 11. Current Transfer Ratio vs. Forward Current
Figure 12. Marking example
Dimensions of 4N32/ 4N33 in mm
weight: 0.50 g creepage distance: air path:y 6 mm
y 6 mm
after mounting on PC board
14770
100
Rev. A4, 11-Jan-99

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